Quantitative discussion on electron-hole universal tunnel mass in ultrathin dielectric of oxide and oxide-nitride

Hiroshi Watanabe*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

MOS and MIS capacitor has been extensively studied in past several decades by many authors. It has been expected to reveal how basic physics relate electron device operation. In this structure, several physical phenomena co-work and then exhibit the electrical properties measured in IV- and CV-characteristics. On the other hand, the conventional models were established separately for the inversion layer (positive gate voltage), the depletion region (negative-low gate voltage), and the accumulation region (negative-high gate voltage). In addition, actual MOS/MIS samples have interfacial transition layer where physical properties are gradually changed from Si to oxide or other dielectric, the varying composition ratio of molecules and local traps owing to atomistic dangling bonds through dielectric layer. What will happen if we self-consistently unify all the physical models that are separately developed?

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages303-320
Number of pages18
Edition4
DOIs
StatePublished - 2 Aug 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

Fingerprint Dive into the research topics of 'Quantitative discussion on electron-hole universal tunnel mass in ultrathin dielectric of oxide and oxide-nitride'. Together they form a unique fingerprint.

Cite this