Quantitative determination of the oxygen partial pressure effect on the perpendicular magnetization of TbFeCo thin films

Shiuh Chao, Bin Yaw Wang, Kon Li Wu, Der-Ray Huang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The oxygen partial pressure during the sputter process of TbFeCo thin films was controlled precisely. The effect of the oxygen partial pressure on the perpendicular magnetization of TbFeCo films was quantitatively studied. Between 5.4 × 10-6 mbar and 1.29 × 10-5 mbar oxygen partial pressure, the films lost perpendicular magnetization rapidly and became paramagnetic. Below this range, oxygen had no effect on the perpendicular magnetization of the films.

Original languageEnglish
Pages (from-to)282-284
Number of pages3
JournalThin Solid Films
Volume266
Issue number2
DOIs
StatePublished - 1 Oct 1995

Keywords

  • Magnetization
  • Oxygen
  • Partial pressure

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