Quadrature regenerative frequency dividers using HEMT technology

Jen Yi Su*, Chin-Chun Meng, Kuan Chang Tsung, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Using two high electron mobility transistor (HEMT)-based technologies, divide-by-two quadrature regenerative frequency dividers (RFDs) are demonstrated. One is the 0.15-μm AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) technology with 85-GHz cutoff frequency and the other is the 0.15-μm InAlAs/InGaAs metamorphic HEMT (mHEMT) technology with 110-GHz cutoff frequency. The demonstrated 22∼26-GHz pHEMT quadrature RFD consumes 28.4 mA at the supply voltage of 7 V while the 36.5∼38.1-GHz mHEMT one consumes 16.9 mA at the supply voltage of 6V. Thus, the mHEMT quadrature RFD operates at high frequency and has lower power consumption as compared to the pHEMT one.

Original languageEnglish
Title of host publication2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
Pages1944-1947
Number of pages4
DOIs
StatePublished - 1 Dec 2010
Event2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010 - Chengdu, China
Duration: 8 May 201011 May 2010

Publication series

Name2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010

Conference

Conference2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
CountryChina
CityChengdu
Period8/05/1011/05/10

Keywords

  • Divide-by-two divider
  • Metamorphic high electron mobility transistor (mHEMT)
  • Pseudomorphic high electron mobility transistor (pHEMT)
  • Quadrature
  • Regenerative frequency divider (RFD)

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