Q-band pHEMT and mHEMT subharmonic gilbert upconversion mixers

Jen Yi Su*, Chin-Chun Meng, Po Yi Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

This letter makes a comparison between Q-band 0.15 μm pseudomorphic high electron mobility transistor (pHEMT) and metamorphic high electron mobility transistor (mHEMT) stacked-LO subharmonic upconversion mixers in terms of gain, isolation and linearity. In general, a 0.15 μm mHEMT device has a higher transconductance and cutoff frequency than a 0.15 μm pHEMT does. Thus, the conversion gain of the mHEMT is higher than that of the pHEMT in the active Gilbert mixer design. The Q-band stacked-LO subharmonic upconversion mixers using the pHEMT and mHEMT technologies have conversion gain of -7.1 dB and -0.2 dB, respectively. The pHEMT upconversion mixer has an OIP3 of -12 dBm and an OIP3dB of -24 dBm, while the mHEMT one shows a 4 dB improvement on linearity for the difference between the OIP3 and OIP3 dB. Both the chip sizes are the same at 1.3 mm X 0.9 mm.

Original languageEnglish
Article number4967870
Pages (from-to)392-394
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume19
Issue number6
DOIs
StatePublished - 1 Jun 2009

Keywords

  • Metamorphic high electron mobility transistor (mHEMT)
  • pseudomorphic high electron mobility transistor (pHEMT)
  • Q-band
  • stacked-LO
  • subharmonic
  • upconversion

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