PVD HfO2 for high-precision MIM capacitor applications

Sun Jung Kim*, Byung Jin Cho, Mine Fu Li, Xiongfei Yu, Chunxiang Zhu, Albert Chin, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10-8 A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.

Original languageEnglish
Pages (from-to)387-389
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number6
DOIs
StatePublished - 1 Jun 2003

Keywords

  • Capacitance density
  • HfO
  • Metal-insulator-metal (MIM) capacitor
  • Sputter
  • Voltage coefficient of capacitor (VCC)

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