Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Shih Wei Lin, Yue Han Wu, Li Chang, Chi Te Liang, Sheng-Di Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

Original languageEnglish
Article number71
Pages (from-to)1-7
Number of pages7
JournalNanoscale Research Letters
Volume10
Issue number1
DOIs
StatePublished - 1 Dec 2015

Keywords

  • Pure electron-electron dephasing
  • Ultrathin metal films
  • Weak anti-localization

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