Punchthrough diode as the transient voltage suppressor for low-voltage electronics

Ya Chin King*, Bin Yu, Jeff Pohlman, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Protection devices for future low-voltage electronics are needed. Performances of a new-punchthrough transient voltage suppressor, TVS, are analyzed with two-dimensional device simulation. Compared with available low-voltage TVS constructed by Zener diode, the punchthrough diode shows for superior leakage current and capacitance. These punchthrough TVS are satisfactory for applications not only at 3 V but even at 1 V.

Original languageEnglish
Pages (from-to)2037-2040
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 1 Nov 1996

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