The pumping-intensity-dependent μ-photoluminescence (PL) from multirecipe Si-implanted quartz with 0.8% excess Si density was investigated. The nc-Si-related μ-PL was found to reach a maximum after annealing at 1100 °C for three hours. The increase in pumping intensity lead to the redshifting of μ-PL from Si-implanted quartz. It was observed that longer annealing duration increased the concentration and diameter of nc-Si precipitated in quartz thereby enlarging the redshift of μ-PL. The results of the measurement of accumulating charges and voltage drop during illumination reveals the correlation between redshift in PL and the photoionized nc-Si induced surface electric field.