Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz

Gong Ru Lin*, Kuo Cheng Yu, Chun Jung Lin, Hao-Chung Kuo, Miao Chia Ou-Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The pumping-intensity-dependent μ-photoluminescence (PL) from multirecipe Si-implanted quartz with 0.8% excess Si density was investigated. The nc-Si-related μ-PL was found to reach a maximum after annealing at 1100 °C for three hours. The increase in pumping intensity lead to the redshifting of μ-PL from Si-implanted quartz. It was observed that longer annealing duration increased the concentration and diameter of nc-Si precipitated in quartz thereby enlarging the redshift of μ-PL. The results of the measurement of accumulating charges and voltage drop during illumination reveals the correlation between redshift in PL and the photoionized nc-Si induced surface electric field.

Original languageEnglish
Pages (from-to)1000-1002
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number6
DOIs
StatePublished - 9 Aug 2004

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