Pulsed laser deposited Ba(Mg1/3Ta2/3)O3 microwave dielectric thin films

Ying-hao Chu*, Su Jien Lin, Kuo Shung Liu, I. Nan Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Ba(Mg1/3Ta2/3)O3 (BMT) microwave dielectric thin films were successfully synthesized by a modified pulsed laser deposition (PLD) process, which includes low temperature (200°C) deposition and high temperature (>500°C) annealing. Crystalline structured BMT thin films were obtained when the PLD-deposited films were post-annealed at a temperature higher than 500°C in oxygen atmosphere. The characteristics of BMT thin film, including crystallinity, grain size, film roughness, and dielectric properties were improved with annealing temperature, achieving dielectric constant K = 23.5 and dissipation factor tanδ = 0.015 (at 1 MHz) for the 800°C-annealed films.

Original languageEnglish
Pages (from-to)915-922
Number of pages8
JournalIntegrated Ferroelectrics
Volume55
DOIs
StatePublished - 1 Dec 2003

Keywords

  • Ba(MgTa)O
  • Microwave dielectrics
  • Pulsed laser deposition

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