P+/n/n+ InP solar cells directly on Si substrates

M. K. Lee*, D. S. Wuu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

p+/n/n+ InP solar cells have been fabricated directly on (100) Si substrates by low-pressure organometallic vapor phase epitaxy. The best experimental cell without an antireflection coating exhibits an air mass one efficiency of 11.9%. The corresponding open-circuit voltage, short-circuit current, and fill factor are 0.78 V, 22.47 mA/cm2, and 0.63, respectively. An electrical characterization identifying loss mechanism is proposed.

Original languageEnglish
Pages (from-to)1140-1142
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number10
DOIs
StatePublished - 1 Dec 1993

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