Pseudo-Van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates

Che Yu Liu, Wonsik Choi, Hsien Chih Huang, Jeongdong Kim, Kyooho Jung, Weidong Zhou, Hao-Chung Kuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

N-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.

Original languageEnglish
Title of host publication2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580576
DOIs
StatePublished - 1 May 2019
Event2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States
Duration: 5 May 201910 May 2019

Publication series

Name2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Conference

Conference2019 Conference on Lasers and Electro-Optics, CLEO 2019
CountryUnited States
CitySan Jose
Period5/05/1910/05/19

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