Properties of Pt/SrBi 2 Ta 2 O 9 /BL/Si MFIS structures containing HfO 2 , SiO 2 , and Si 3 N 4 buffer layers

Ching Chich Leu*, Chia Feng Leu, Chao-Hsin Chien, Ming Jui Yang, Rui Hao Huang, Chen Han Lin, Fan Yi Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The physical and electrical properties of Pt SrBi2 Ta2 O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si 3 N 4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalElectrochemical and Solid-State Letters
Volume10
Issue number5
DOIs
StatePublished - 23 Mar 2007

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