Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots

T. Y. Lin*, D. Y. Lyu, J. Chang, J. L. Shen, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Temperature and time evolution of the photoluminescence (PL) intensity of bimodal ZnTe/ZnSe type-II quantum dots (QDs) were investigated. A particular temperature dependence of PL was observed in large QDs. PL decay of small QDs is composed of a faster initial component and a slower tail component whereas PL decay of large QDs simply comprises a fast component. All phenomena could be understood consistently by considering charge carrier transfer mechanism, band-bending effect, and the existence of nonradiative centers in the bimodal type-II QD array. We show that excitons play an important role in the emission properties of a self-assembled type-II QD system.

Original languageEnglish
Article number121917
JournalApplied Physics Letters
Volume88
Issue number12
DOIs
StatePublished - 20 Mar 2006

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