Properties of nitrogen-implanted p-type ZnO films grown on Si 3N4/Si by radio-frequency magnetron sputtering

Chin Ching Lin, San-Yuan Chen*, Syh Yuh Cheng, Hsin Yi Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

167 Scopus citations

Abstract

The properties of nitrogen-implanted p-type ZnO films grown on Si 3N4/Si were investigated. The radio-frequency magnetron sputtering was used along with nitrogen implanted process for the growth of the films, the x-ray diffraction technique was used for the study of the film structure. It was found that the ZnO films exhibited hole concentration of 5.0×1016-7.3×1017 cm-3, hole mobility of 2.52-6.02 cm2/Vs, and resistivity of 10.11-15.3 ωcm.

Original languageEnglish
Pages (from-to)5040-5042
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number24
DOIs
StatePublished - 14 Jun 2004

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