Properties of Mg activation in thermally treated GaN:Mg films

C. F. Lin*, Huang-Chung Cheng, C. C. Chang, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The Mg acceptors of GaN films are activated as p-type GaN with rapid thermal annealing (RTA) and furnace treatments. The GaN:Mg films are activated successfully by using the RTA system below 1000°C for 1 min. After the RTA treatment, we observed a sharper linewidth and stronger emission intensities from donor to acceptor peaks in the photoluminescence spectra. By comparing the electrical properties of GaN:Mg films at optimum conditions made with RTA (800°C) and furnace (700°C) treatments, we find similar activated hole concentration and a higher hole mobility for GaN:Mg films with RTA treatment at 800°C. A higher bulk resistivity caused by increasing nitrogen vacancies is found at higher temperature and longer time RTA treatments. Faster treatment times and lower temperatures for the GaN:Mg films were achieved with the RTA activation process.

Original languageEnglish
Pages (from-to)6515-6518
Number of pages4
JournalJournal of Applied Physics
Volume88
Issue number11
DOIs
StatePublished - 1 Dec 2000

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