Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

D. G. Chtchekine*, L. P. Fu, G. D. Gilliland, Y. Chen, S. E. Ralph, K. K. Bajaj, Y. Bu, Ming-Chang Lin, F. T. Bacalzo, S. R. Stock

*Corresponding author for this work

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Physics & Astronomy