Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine

Wen Chung Chen; C. S. Chang; Wei-Kuo Chen

doi:10.1143/JJAP.36.3649

Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine

Wen Chung Chen, C. S. Chang^*, Wei-Kuo Chen

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The properties of highly resistive and nonstoichiometric GaAs films grown by metalorganic chemical vapor deposition (MOCVD) at low temperature (LT) are studied by transmission electron microscopy (TEM), photo-luminescence (PL), deep level transient spectroscopy, and double crystal X-ray and X-ray photoelectron spectroscopy. GaAs films are grown with source precursors of triethylgallium (TEGa) and tertiarybutylarsine (TBAs) at substrate temperatures of 425-550°C. The microstructure observed in the MOCVD GaAs film shows better film quality as the input V/III molar flow ratios increase. Furthermore, the growth rate and the shift of binding energy for the As 3d core level of the film are slightly increased with increasing V/III ratio, but the intensity of V_As-related emission in PL is decreased. We suggest that the high resistivity of the LT-MOCVD film is due to structural defects caused by the nonstoichiometry of excess As atoms in the film.

Original language	English
Pages (from-to)	3649-3654
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.36.3649
State	Published - 1 Jun 1997

Keywords

High resistivity film
LT-MOCVD
Nonstoichiometry
TBAs
V/III ratios

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@article{8c3e21de624645e6ae741c4f6eec5c1e,

title = "Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine",

abstract = "The properties of highly resistive and nonstoichiometric GaAs films grown by metalorganic chemical vapor deposition (MOCVD) at low temperature (LT) are studied by transmission electron microscopy (TEM), photo-luminescence (PL), deep level transient spectroscopy, and double crystal X-ray and X-ray photoelectron spectroscopy. GaAs films are grown with source precursors of triethylgallium (TEGa) and tertiarybutylarsine (TBAs) at substrate temperatures of 425-550°C. The microstructure observed in the MOCVD GaAs film shows better film quality as the input V/III molar flow ratios increase. Furthermore, the growth rate and the shift of binding energy for the As 3d core level of the film are slightly increased with increasing V/III ratio, but the intensity of VAs-related emission in PL is decreased. We suggest that the high resistivity of the LT-MOCVD film is due to structural defects caused by the nonstoichiometry of excess As atoms in the film.",

keywords = "High resistivity film, LT-MOCVD, Nonstoichiometry, TBAs, V/III ratios",

author = "Chen, {Wen Chung} and Chang, {C. S.} and Wei-Kuo Chen",

year = "1997",

month = jun,

day = "1",

doi = "10.1143/JJAP.36.3649",

language = "English",

volume = "36",

pages = "3649--3654",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

}

Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine. / Chen, Wen Chung; Chang, C. S.; Chen, Wei-Kuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 6 A, 01.06.1997, p. 3649-3654.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Properties of highly resistive and nonstoichiometric GaAs film grown by low-temperature metalorganic chemical vapor deposition using tertiarybutylarsine

AU - Chen, Wen Chung

AU - Chang, C. S.

AU - Chen, Wei-Kuo

PY - 1997/6/1

Y1 - 1997/6/1

N2 - The properties of highly resistive and nonstoichiometric GaAs films grown by metalorganic chemical vapor deposition (MOCVD) at low temperature (LT) are studied by transmission electron microscopy (TEM), photo-luminescence (PL), deep level transient spectroscopy, and double crystal X-ray and X-ray photoelectron spectroscopy. GaAs films are grown with source precursors of triethylgallium (TEGa) and tertiarybutylarsine (TBAs) at substrate temperatures of 425-550°C. The microstructure observed in the MOCVD GaAs film shows better film quality as the input V/III molar flow ratios increase. Furthermore, the growth rate and the shift of binding energy for the As 3d core level of the film are slightly increased with increasing V/III ratio, but the intensity of VAs-related emission in PL is decreased. We suggest that the high resistivity of the LT-MOCVD film is due to structural defects caused by the nonstoichiometry of excess As atoms in the film.

AB - The properties of highly resistive and nonstoichiometric GaAs films grown by metalorganic chemical vapor deposition (MOCVD) at low temperature (LT) are studied by transmission electron microscopy (TEM), photo-luminescence (PL), deep level transient spectroscopy, and double crystal X-ray and X-ray photoelectron spectroscopy. GaAs films are grown with source precursors of triethylgallium (TEGa) and tertiarybutylarsine (TBAs) at substrate temperatures of 425-550°C. The microstructure observed in the MOCVD GaAs film shows better film quality as the input V/III molar flow ratios increase. Furthermore, the growth rate and the shift of binding energy for the As 3d core level of the film are slightly increased with increasing V/III ratio, but the intensity of VAs-related emission in PL is decreased. We suggest that the high resistivity of the LT-MOCVD film is due to structural defects caused by the nonstoichiometry of excess As atoms in the film.

KW - High resistivity film

KW - LT-MOCVD

KW - Nonstoichiometry

KW - TBAs

KW - V/III ratios

UR - http://www.scopus.com/inward/record.url?scp=0031163562&partnerID=8YFLogxK

U2 - 10.1143/JJAP.36.3649

DO - 10.1143/JJAP.36.3649

M3 - Article

AN - SCOPUS:0031163562

VL - 36

SP - 3649

EP - 3654

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 6 A

ER -