Properties of CeO x/La 2O 3 gate dielectric and its effects on the MOS transistor characteristics

H. Wong; B. L. Yang; K. Kakushima; P. Ahmet; H. Iwai

doi:10.1016/j.vacuum.2011.09.010

Properties of CeO _x/La ₂O ₃ gate dielectric and its effects on the MOS transistor characteristics

H. Wong^*, B. L. Yang, K. Kakushima, P. Ahmet, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Both n-channel and p-channel metal-oxide-semiconductor (MOS) transistors were fabricated by using CeO _x/La ₂O ₃ stacked gate dielectric film and tungsten metal electrode. X-ray photoelectron spectroscopy (XPS) measurements indicated that the as-deposited CeO ₂ was reduced to CeO _x (a mixture of CeO ₂ and Ce ₂O ₃ phases) and the released oxygen atoms filled up the oxygen vacancies in the La ₂O ₃ film and thus improved the electrical characteristics of the transistors. We found that the amount of the dielectric defects in this structure were very low as evidenced by the recorded small threshold voltages for both types of transistors. The transistors also have excellent subthreshold characteristics and hot-carrier robustness. The subthreshold slopes were 72 and 73 mV/dec for n-channel and p-channel transistors with effective gate length of 1.8 μm, respectively, and remain fairly unchanged upon prolonged hot-carrier stressing.

Original language	English
Pages (from-to)	990-993
Number of pages	4
Journal	Vacuum
Volume	86
Issue number	7
DOIs	https://doi.org/10.1016/j.vacuum.2011.09.010
State	Published - 8 Feb 2012

Keywords

Cerium oxide
Lanthanum oxide
MOS transistor
Subthreshold slope

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title = "Properties of CeO x/La 2O 3 gate dielectric and its effects on the MOS transistor characteristics",

abstract = "Both n-channel and p-channel metal-oxide-semiconductor (MOS) transistors were fabricated by using CeO x/La 2O 3 stacked gate dielectric film and tungsten metal electrode. X-ray photoelectron spectroscopy (XPS) measurements indicated that the as-deposited CeO 2 was reduced to CeO x (a mixture of CeO 2 and Ce 2O 3 phases) and the released oxygen atoms filled up the oxygen vacancies in the La 2O 3 film and thus improved the electrical characteristics of the transistors. We found that the amount of the dielectric defects in this structure were very low as evidenced by the recorded small threshold voltages for both types of transistors. The transistors also have excellent subthreshold characteristics and hot-carrier robustness. The subthreshold slopes were 72 and 73 mV/dec for n-channel and p-channel transistors with effective gate length of 1.8 μm, respectively, and remain fairly unchanged upon prolonged hot-carrier stressing.",

keywords = "Cerium oxide, Lanthanum oxide, MOS transistor, Subthreshold slope",

author = "H. Wong and Yang, {B. L.} and K. Kakushima and P. Ahmet and H. Iwai",

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T1 - Properties of CeO x/La 2O 3 gate dielectric and its effects on the MOS transistor characteristics

AU - Wong, H.

AU - Yang, B. L.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Iwai, H.

PY - 2012/2/8

Y1 - 2012/2/8

N2 - Both n-channel and p-channel metal-oxide-semiconductor (MOS) transistors were fabricated by using CeO x/La 2O 3 stacked gate dielectric film and tungsten metal electrode. X-ray photoelectron spectroscopy (XPS) measurements indicated that the as-deposited CeO 2 was reduced to CeO x (a mixture of CeO 2 and Ce 2O 3 phases) and the released oxygen atoms filled up the oxygen vacancies in the La 2O 3 film and thus improved the electrical characteristics of the transistors. We found that the amount of the dielectric defects in this structure were very low as evidenced by the recorded small threshold voltages for both types of transistors. The transistors also have excellent subthreshold characteristics and hot-carrier robustness. The subthreshold slopes were 72 and 73 mV/dec for n-channel and p-channel transistors with effective gate length of 1.8 μm, respectively, and remain fairly unchanged upon prolonged hot-carrier stressing.

AB - Both n-channel and p-channel metal-oxide-semiconductor (MOS) transistors were fabricated by using CeO x/La 2O 3 stacked gate dielectric film and tungsten metal electrode. X-ray photoelectron spectroscopy (XPS) measurements indicated that the as-deposited CeO 2 was reduced to CeO x (a mixture of CeO 2 and Ce 2O 3 phases) and the released oxygen atoms filled up the oxygen vacancies in the La 2O 3 film and thus improved the electrical characteristics of the transistors. We found that the amount of the dielectric defects in this structure were very low as evidenced by the recorded small threshold voltages for both types of transistors. The transistors also have excellent subthreshold characteristics and hot-carrier robustness. The subthreshold slopes were 72 and 73 mV/dec for n-channel and p-channel transistors with effective gate length of 1.8 μm, respectively, and remain fairly unchanged upon prolonged hot-carrier stressing.

KW - Cerium oxide

KW - Lanthanum oxide

KW - MOS transistor

KW - Subthreshold slope

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