Properties of CeO x/La 2O 3 gate dielectric and its effects on the MOS transistor characteristics

H. Wong*, B. L. Yang, K. Kakushima, P. Ahmet, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Both n-channel and p-channel metal-oxide-semiconductor (MOS) transistors were fabricated by using CeO x/La 2O 3 stacked gate dielectric film and tungsten metal electrode. X-ray photoelectron spectroscopy (XPS) measurements indicated that the as-deposited CeO 2 was reduced to CeO x (a mixture of CeO 2 and Ce 2O 3 phases) and the released oxygen atoms filled up the oxygen vacancies in the La 2O 3 film and thus improved the electrical characteristics of the transistors. We found that the amount of the dielectric defects in this structure were very low as evidenced by the recorded small threshold voltages for both types of transistors. The transistors also have excellent subthreshold characteristics and hot-carrier robustness. The subthreshold slopes were 72 and 73 mV/dec for n-channel and p-channel transistors with effective gate length of 1.8 μm, respectively, and remain fairly unchanged upon prolonged hot-carrier stressing.

Original languageEnglish
Pages (from-to)990-993
Number of pages4
Issue number7
StatePublished - 8 Feb 2012


  • Cerium oxide
  • Lanthanum oxide
  • MOS transistor
  • Subthreshold slope

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