Properties of Ballistic current in MOSFETs studied by RT model

Yasuhiro Morozumi*, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Kenji Natori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

How to increase the Ballistic conductivity is an important issue in the nano-scaled MOSFET. In this paper, we employed R-T model to investigate the optimum conditions for higher ballistic conductivity in MOSFET. It was found that a non-doped channel and a drain with a doping concentration less than 1020[cm-3] are essential for obtaining higher ballistic current in the MOSFET with a gate length of 10[nm].

Original languageEnglish
Title of host publicationSemiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
Pages129-132
Number of pages4
StatePublished - 2008
Event7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China
Duration: 15 Mar 200817 Mar 2008

Publication series

NameProceedings - Electrochemical Society
VolumePV 2008-1

Conference

Conference7th International Conference on Semiconductor Technology, ISTC 2008
CountryChina
CityShanghai
Period15/03/0817/03/08

Keywords

  • Back scattering
  • Ballistic
  • RT model
  • Transport

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