Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown

Reza Moazzami*, Jack Lee, Ih Chen Chen, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

18 Scopus citations

Abstract

A technique is presented for determining the thinnest oxide which satisfies a given time-dependent dielectric breakdown reliability specification. The intrinsic limit for a 10-yr lifetime at 125°C is estimated to be 80 angstrom for 5.5-V operation and 50 angstrom for 3.6-V operation. For the particular technology studied here, 150-angstrom oxide meets typical reliability specifications for 5.5-V operation, and 80-angstrom oxide is acceptable for 3.6-V operation (both at 125 °C).

Original languageEnglish
Pages (from-to)710-713
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1988
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 11 Dec 198814 Dec 1988

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