A technique is presented for determining the thinnest oxide which satisfies a given time-dependent dielectric breakdown reliability specification. The intrinsic limit for a 10-yr lifetime at 125°C is estimated to be 80 angstrom for 5.5-V operation and 50 angstrom for 3.6-V operation. For the particular technology studied here, 150-angstrom oxide meets typical reliability specifications for 5.5-V operation, and 80-angstrom oxide is acceptable for 3.6-V operation (both at 125 °C).
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1988|
|Event||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
Duration: 11 Dec 1988 → 14 Dec 1988