Projecting Gate Oxide Reliability and Optimizing Reliability Screens

Reza Moazzami, Chen-Ming Hu

Research output: Contribution to journalArticle

79 Scopus citations

Abstract

The effect of time-dependent stress voltage and temperature on the reliability of thin SiO, films is incorporated in a quantitative defect-induced breakdown model. Based on this model, design curves are presented which can be used along with a breakdown voltage distribution for an oxide technology to determine optimal burn-in conditions. The tradeoff between improved reliability and lower burn-in yield for different gate oxide technologies can also he examined quantitatively using the model presented here.

Original languageEnglish
Pages (from-to)1643-1650
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume37
Issue number7
DOIs
StatePublished - 1 Jan 1990

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