Projecting CMOS circuit hot-carrier reliability from DC device lifetime

Khandker N. Quader*, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

We present generalized hot-carrier-reliability technology qualification and circuit design rules. The inverse duty factors, i. e. DC to AC time conversion factors for N- and P- MOSFETS are found to be 4/ftrise and 10/ftfall or 120 and 300 respectively. typically, Δτ/τ of an inverter is 1/4 ΔId/ Id of NMOSFET minus 1/2 ΔId/Id of PMOSFET. The proposed design rules are valid for both 5V and 3.3V technologies and can be easily incorporated into existing DC lifetime prediction routines.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages511-514
Number of pages4
ISBN (Print)0780314506
DOIs
StatePublished - 1 Dec 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 5 Dec 19938 Dec 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Conference

ConferenceProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period5/12/938/12/93

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