Projecting CMOS circuit hot-carrier reliability from DC device lifetime

Khandker N. Quader; Ping K. Ko; Chen-Ming Hu

doi:10.1109/IEDM.1993.347299

Projecting CMOS circuit hot-carrier reliability from DC device lifetime

Khandker N. Quader^*, Ping K. Ko, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

We present generalized hot-carrier-reliability technology qualification and circuit design rules. The inverse duty factors, i. e. DC to AC time conversion factors for N- and P- MOSFETS are found to be 4/ft_rise and 10/ft_fall or 120 and 300 respectively. typically, Δτ/τ of an inverter is 1/4 ΔI_d/ I_d of NMOSFET minus 1/2 ΔI_d/I_d of PMOSFET. The proposed design rules are valid for both 5V and 3.3V technologies and can be easily incorporated into existing DC lifetime prediction routines.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting
Editors	Anon
Publisher	Publ by IEEE
Pages	511-514
Number of pages	4
ISBN (Print)	0780314506
DOIs	https://doi.org/10.1109/IEDM.1993.347299
State	Published - 1 Dec 1993
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: 5 Dec 1993 → 8 Dec 1993

Publication series

Name	Technical Digest - International Electron Devices Meeting
ISSN (Print)	0163-1918

Conference

Conference	Proceedings of the 1993 IEEE International Electron Devices Meeting
City	Washington, DC, USA
Period	5/12/93 → 8/12/93

Access to Document

10.1109/IEDM.1993.347299

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title = "Projecting CMOS circuit hot-carrier reliability from DC device lifetime",

abstract = "We present generalized hot-carrier-reliability technology qualification and circuit design rules. The inverse duty factors, i. e. DC to AC time conversion factors for N- and P- MOSFETS are found to be 4/ftrise and 10/ftfall or 120 and 300 respectively. typically, Δτ/τ of an inverter is 1/4 ΔId/ Id of NMOSFET minus 1/2 ΔId/Id of PMOSFET. The proposed design rules are valid for both 5V and 3.3V technologies and can be easily incorporated into existing DC lifetime prediction routines.",

author = "Quader, {Khandker N.} and Ko, {Ping K.} and Chen-Ming Hu",

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Quader, KN, Ko, PK & Hu, C-M 1993, Projecting CMOS circuit hot-carrier reliability from DC device lifetime. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Technical Digest - International Electron Devices Meeting, Publ by IEEE, pp. 511-514, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 5/12/93. https://doi.org/10.1109/IEDM.1993.347299

Projecting CMOS circuit hot-carrier reliability from DC device lifetime. / Quader, Khandker N.; Ko, Ping K.; Hu, Chen-Ming.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Publ by IEEE, 1993. p. 511-514 (Technical Digest - International Electron Devices Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We present generalized hot-carrier-reliability technology qualification and circuit design rules. The inverse duty factors, i. e. DC to AC time conversion factors for N- and P- MOSFETS are found to be 4/ftrise and 10/ftfall or 120 and 300 respectively. typically, Δτ/τ of an inverter is 1/4 ΔId/ Id of NMOSFET minus 1/2 ΔId/Id of PMOSFET. The proposed design rules are valid for both 5V and 3.3V technologies and can be easily incorporated into existing DC lifetime prediction routines.

AB - We present generalized hot-carrier-reliability technology qualification and circuit design rules. The inverse duty factors, i. e. DC to AC time conversion factors for N- and P- MOSFETS are found to be 4/ftrise and 10/ftfall or 120 and 300 respectively. typically, Δτ/τ of an inverter is 1/4 ΔId/ Id of NMOSFET minus 1/2 ΔId/Id of PMOSFET. The proposed design rules are valid for both 5V and 3.3V technologies and can be easily incorporated into existing DC lifetime prediction routines.

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