We report on the growth and fabrication of (InGa)As quantum dot classical and quantum light emitters, i.e. edge-emitting laser diodes and single photon sources, respectively. With an InAlAs/InGaAs composite overgrown layer, InAs quantum dots exhibit high optical quality and large state-separation that are desirable for laser diodes with high characteristic temperature. Single photon source has been realized by optical pumping a single quantum dot through a submicron aperture fabricated on a low-density self-assembled InGaAs quantum dots ensemble.
|Number of pages||6|
|State||Published - 1 Dec 2005|
|Event||43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States|
Duration: 16 Oct 2005 → 21 Oct 2005