Progress on InAs-based quantum dot light emitters

Jen Inn Chyi*, Wei Sheng Liu, Tung Po Hsieh, Tzu Min Hsu, Wen-Hao Chang, Wen Yen Chen, Hsiang Szu Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

We report on the growth and fabrication of (InGa)As quantum dot classical and quantum light emitters, i.e. edge-emitting laser diodes and single photon sources, respectively. With an InAlAs/InGaAs composite overgrown layer, InAs quantum dots exhibit high optical quality and large state-separation that are desirable for laser diodes with high characteristic temperature. Single photon source has been realized by optical pumping a single quantum dot through a submicron aperture fabricated on a low-density self-assembled InGaAs quantum dots ensemble.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalECS Transactions
Volume1
Issue number2
StatePublished - 1 Dec 2005
Event43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
Duration: 16 Oct 200521 Oct 2005

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  • Cite this

    Chyi, J. I., Liu, W. S., Hsieh, T. P., Hsu, T. M., Chang, W-H., Chen, W. Y., & Chang, H. S. (2005). Progress on InAs-based quantum dot light emitters. ECS Transactions, 1(2), 1-6.