Progress and prospects of GaN-based VCSEL from near UV to green emission

Hsin-Chieh Yu, Zhi wei Zheng, Yang Mei, Rong bin Xu, Jian ping Liu, Hui Yang, Bao ping Zhang*, Tien-Chang Lu, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

28 Scopus citations

Abstract

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the ‘green gap’.

Original languageEnglish
Pages (from-to)1-19
Number of pages19
JournalProgress in Quantum Electronics
Volume57
DOIs
StatePublished - 1 Jan 2018

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