Programming efficiency of stacked-gate flash memories with high-κ dielectrics

Y. Y. Chen*, Chao-Hsin Chien, K. T. Kin, J. C. Lou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2 as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2 as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND-and NOR-type stacked-gate flash memories, respectively.

Original languageEnglish
Title of host publicationNanoSingapore 2006
Subtitle of host publicationIEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Pages302-305
Number of pages4
DOIs
StatePublished - 14 Nov 2006
Event2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore
Duration: 10 Jan 200613 Jan 2006

Publication series

NameNanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Volume2006

Conference

Conference2006 IEEE Conference on Emerging Technologies - Nanoelectronics
CountrySingapore
CitySingapore
Period10/01/0613/01/06

Fingerprint Dive into the research topics of 'Programming efficiency of stacked-gate flash memories with high-κ dielectrics'. Together they form a unique fingerprint.

Cite this