Program trapped-charge effect on random telegraph-noise amplitude in a planar SONOS flash memory cell

H. C. Ma*, Y. L. Chou, J. P. Chiu, Ta-Hui Wang, S. H. Ku, N. K. Zou, Vincent Chen, W. P. Lu, K. C. Chen, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SONOS cell has a wide spread in RTN amplitudes after programming, while an FG cell has identical RTN amplitudes in erase and program states at the same read-current level. A 3-D atomistic simulation is performed to calculate RTN amplitudes. Our result shows that the wide spread of program-state RTN amplitudes in a SONOS cell is attributed to a current-path-percolation effect caused by random discrete nitride charges.

Original languageEnglish
Pages (from-to)1188-1190
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
StatePublished - 9 Oct 2009

Keywords

  • Percolation
  • Program charge
  • Random telegraph noise (RTN)
  • SONOS

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