Profiling of nitride-trap-energy distribution in SONOS flash memory by using a variable-amplitude low-frequency charge-pumping technique

Yi Ying Liao*, Sheng Fu Horng, Yao Wen Chang, Tao Cheng Lu, Kuang Chao Chen, Ta-Hui Wang, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A variable-amplitude low-frequency charge-pumping technique is proposed to characterize the nitride-trap energy and spatial distributions in SONOS Flash memory cells. A numerical model based on Shockley-Read-Hall-like electron tunneling capture is used to correlate a charge-pumping current with the nitride-trap energy and position. By changing the frequency and pulse amplitude in charge-pumping measurement, a nitride-trap density, as a function of the trap position and energy, can be extracted.

Original languageEnglish
Pages (from-to)828-830
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number9
DOIs
StatePublished - 1 Dec 2007

Keywords

  • Charge pumping
  • Flash memory
  • Low frequency
  • SONOS
  • Variable amplitude

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