Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique

Kazuo Tsutsui*, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages58-61
Number of pages4
DOIs
StatePublished - 2008
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 15 May 200816 May 2008

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Conference

ConferenceIWJT-2008 - International Workshop on Junction Technology
CountryChina
CityShanghai
Period15/05/0816/05/08

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  • Cite this

    Tsutsui, K., Watanabe, M., Nakagawa, Y., Sakai, K., Kai, T., Jin, C. G., Sasaki, Y., Kakushima, K., Ahmet, P., Mizuno, B., Hattori, T., & Iwai, H. (2008). Profiling of carrier properties for shallow junctions using a new sub-nanometer step-by-step etching technique. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 58-61). [4540018] (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540018