Production-worthy USJ formation by self-regulatory plasma doping method

Y. Sasaki*, H. Ito, K. Okashita, H. Tamura, C. G. Jin, B. Mizuno, T. Okumura, I. Aiba, Y. Fukagawa, H. Sauddin, K. Tsutsuf, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

A new method of plasma doping that achieves tight control on dosimetry and uniformity has been developed. It uses a self-regulatory behavior of plasma processes that brings high accuracy on dose control and uniformity within 1.5%. The largest advantage of this self-regulatory plasma doping (SRPD) is that the accuracy of the process control is much less dependent on the uniformity of the plasma, which makes a revolutionary difference to the plasma process as it becomes free from the primary hardware constraint. A typical doping of boron using B2H5/He gas mixture at dose of 1× 10 15 ions/cm2 can achieve a uniformity of less than 1.5% across a 300mm silicon wafer when the plasma uniformity above the wafer plane is as poor as 10%. The SRPD process also forms very abrupt junctions such as less than 2nm/decade at the junction depth of 10nm due to an instantaneous amorphization of the wafer surface within the first 5 seconds of the process duration. Combined with the throughput advantage at low energy against the conventional ion implantation, the SRPD offers an ideal performance for USJ formation for 45nm technology node and beyond.

Original languageEnglish
Title of host publicationION IMPLANTATION TECHNOLOGY
Subtitle of host publication16th International Conference on Ion Implantation Technology, IIT 2006
PublisherAmerican Institute of Physics Inc.
Pages524-527
Number of pages4
ISBN (Print)0735403651, 9780735403659
DOIs
StatePublished - 2006
EventION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 - Marseille, France
Duration: 11 Jun 200616 Nov 2006

Publication series

NameAIP Conference Proceedings
Volume866
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferenceION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006
CountryFrance
CityMarseille
Period11/06/0616/11/06

Keywords

  • Amorphization
  • Dose control
  • Plasma doping
  • Self-regulation
  • Ultra-shallow junction (USJ)
  • Uniformity

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    Sasaki, Y., Ito, H., Okashita, K., Tamura, H., Jin, C. G., Mizuno, B., Okumura, T., Aiba, I., Fukagawa, Y., Sauddin, H., Tsutsuf, K., & Iwai, H. (2006). Production-worthy USJ formation by self-regulatory plasma doping method. In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 (pp. 524-527). (AIP Conference Proceedings; Vol. 866). American Institute of Physics Inc.. https://doi.org/10.1063/1.2401571