Production of SiO and Si(3P) atom in the reaction of silane with O(1D)

Atsuko Takahara; Atsumu Tezaki; Hiroyuki Matsui

doi:10.1021/jp9910237

Production of SiO and Si(³P) atom in the reaction of silane with O(¹D)

Atsuko Takahara, Atsumu Tezaki^*, Hiroyuki Matsui

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The mechanism of SiO production in the reaction of O(¹D) with SiH₄ is reinvestigated, where O(¹D) is produced by the 193 nm photolysis of N₂O and nascent distribution of SiO (v = 0-8) is determined by using a laser-induced fluorescence (LIF) detection system. Improvement of the reliability of the data is attained by using a simple tunable optical parametric oscillator system, since this system can cover the progression of the LIF spectrum over a wide range of wavelengths within a single scan. Nascent vibrational distribution of SiO is approximately expressed by a Boltzmann distribution of about T_v = 5200 K. Also, the Si(³P) atom is identified as a direct product of this reaction, although the branching fraction is estimated to be only 3 × 10^-4 of the total products. The mechanism of the formation of SiO is discussed by comparing the observed nascent vibrational distribution with that calculated by a quasi-static theory for the multiple-step unimolecular decomposition of chemically activated silanol.

Original language	English
Pages (from-to)	11315-11320
Number of pages	6
Journal	Journal of Physical Chemistry A
Volume	103
Issue number	51
DOIs	https://doi.org/10.1021/jp9910237
State	Published - 23 Dec 1999

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title = "Production of SiO and Si(3P) atom in the reaction of silane with O(1D)",

abstract = "The mechanism of SiO production in the reaction of O(1D) with SiH4 is reinvestigated, where O(1D) is produced by the 193 nm photolysis of N2O and nascent distribution of SiO (v = 0-8) is determined by using a laser-induced fluorescence (LIF) detection system. Improvement of the reliability of the data is attained by using a simple tunable optical parametric oscillator system, since this system can cover the progression of the LIF spectrum over a wide range of wavelengths within a single scan. Nascent vibrational distribution of SiO is approximately expressed by a Boltzmann distribution of about Tv = 5200 K. Also, the Si(3P) atom is identified as a direct product of this reaction, although the branching fraction is estimated to be only 3 × 10-4 of the total products. The mechanism of the formation of SiO is discussed by comparing the observed nascent vibrational distribution with that calculated by a quasi-static theory for the multiple-step unimolecular decomposition of chemically activated silanol.",

author = "Atsuko Takahara and Atsumu Tezaki and Hiroyuki Matsui",

year = "1999",

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TY - JOUR

T1 - Production of SiO and Si(3P) atom in the reaction of silane with O(1D)

AU - Takahara, Atsuko

AU - Tezaki, Atsumu

AU - Matsui, Hiroyuki

PY - 1999/12/23

Y1 - 1999/12/23

N2 - The mechanism of SiO production in the reaction of O(1D) with SiH4 is reinvestigated, where O(1D) is produced by the 193 nm photolysis of N2O and nascent distribution of SiO (v = 0-8) is determined by using a laser-induced fluorescence (LIF) detection system. Improvement of the reliability of the data is attained by using a simple tunable optical parametric oscillator system, since this system can cover the progression of the LIF spectrum over a wide range of wavelengths within a single scan. Nascent vibrational distribution of SiO is approximately expressed by a Boltzmann distribution of about Tv = 5200 K. Also, the Si(3P) atom is identified as a direct product of this reaction, although the branching fraction is estimated to be only 3 × 10-4 of the total products. The mechanism of the formation of SiO is discussed by comparing the observed nascent vibrational distribution with that calculated by a quasi-static theory for the multiple-step unimolecular decomposition of chemically activated silanol.

AB - The mechanism of SiO production in the reaction of O(1D) with SiH4 is reinvestigated, where O(1D) is produced by the 193 nm photolysis of N2O and nascent distribution of SiO (v = 0-8) is determined by using a laser-induced fluorescence (LIF) detection system. Improvement of the reliability of the data is attained by using a simple tunable optical parametric oscillator system, since this system can cover the progression of the LIF spectrum over a wide range of wavelengths within a single scan. Nascent vibrational distribution of SiO is approximately expressed by a Boltzmann distribution of about Tv = 5200 K. Also, the Si(3P) atom is identified as a direct product of this reaction, although the branching fraction is estimated to be only 3 × 10-4 of the total products. The mechanism of the formation of SiO is discussed by comparing the observed nascent vibrational distribution with that calculated by a quasi-static theory for the multiple-step unimolecular decomposition of chemically activated silanol.

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