Production of SiO and Si(3P) atom in the reaction of silane with O(1D)

Atsuko Takahara, Atsumu Tezaki*, Hiroyuki Matsui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The mechanism of SiO production in the reaction of O(1D) with SiH4 is reinvestigated, where O(1D) is produced by the 193 nm photolysis of N2O and nascent distribution of SiO (v = 0-8) is determined by using a laser-induced fluorescence (LIF) detection system. Improvement of the reliability of the data is attained by using a simple tunable optical parametric oscillator system, since this system can cover the progression of the LIF spectrum over a wide range of wavelengths within a single scan. Nascent vibrational distribution of SiO is approximately expressed by a Boltzmann distribution of about Tv = 5200 K. Also, the Si(3P) atom is identified as a direct product of this reaction, although the branching fraction is estimated to be only 3 × 10-4 of the total products. The mechanism of the formation of SiO is discussed by comparing the observed nascent vibrational distribution with that calculated by a quasi-static theory for the multiple-step unimolecular decomposition of chemically activated silanol.

Original languageEnglish
Pages (from-to)11315-11320
Number of pages6
JournalJournal of Physical Chemistry A
Volume103
Issue number51
DOIs
StatePublished - 23 Dec 1999

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