This paper addresses the producibility and performance of self-aligned AlGaAs/GaAs HBTs for microwave power applications. Excellent device dc and rf characteristics and power performance have been demonstrated. The rf probing yield was consistent with the dc yield, and uniform power performance was consistently achieved from the dc screened HBTs. A record high fmax of 350 GHz was extrapolated for the common base HBT. 7-12 GHz MMIC amplifiers achieved 4W power level with 34% peak power added efficiency. A 7.5-14 GHz linear power amplifier demonstrated a low level of third-order intermodulation distortion. This excellent performance is achievable because of the characteristic uniformity of the material epitaxial growth and the simplicity of the self-aligned lithography process.