Producibility and performance of the microwave power HBT

W. J. Ho, N. L. Wang, M. F. Chang, J. A. Higgins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This paper addresses the producibility and performance of self-aligned AlGaAs/GaAs HBTs for microwave power applications. Excellent device dc and rf characteristics and power performance have been demonstrated. The rf probing yield was consistent with the dc yield, and uniform power performance was consistently achieved from the dc screened HBTs. A record high fmax of 350 GHz was extrapolated for the common base HBT. 7-12 GHz MMIC amplifiers achieved 4W power level with 34% peak power added efficiency. A 7.5-14 GHz linear power amplifier demonstrated a low level of third-order intermodulation distortion. This excellent performance is achievable because of the characteristic uniformity of the material epitaxial growth and the simplicity of the self-aligned lithography process.

Original languageEnglish
Title of host publicationGaAs IC Symposium Technical Digest 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages263-266
Number of pages4
ISBN (Electronic)0780307739, 9780780307735
DOIs
StatePublished - 1 Jan 1992
Event14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992 - Miami Beach, United States
Duration: 4 Oct 19977 Oct 1997

Publication series

NameGaAs IC Symposium Technical Digest 1992

Conference

Conference14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992
CountryUnited States
CityMiami Beach
Period4/10/977/10/97

Fingerprint Dive into the research topics of 'Producibility and performance of the microwave power HBT'. Together they form a unique fingerprint.

  • Cite this

    Ho, W. J., Wang, N. L., Chang, M. F., & Higgins, J. A. (1992). Producibility and performance of the microwave power HBT. In GaAs IC Symposium Technical Digest 1992 (pp. 263-266). [247271] (GaAs IC Symposium Technical Digest 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GAAS.1992.247271