Processing and characterization of hybrid silica-based xerogel films

Loren A. Chow*, Ted Yu, Bruce S. Dunn, King-Ning Tu, Chien Chiang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Hybrid organic-inorganic xerogel films were deposited as porous thin films by spinning the precursor sol on silicon substrates. Films of various compositions were prepared using combinations of the following precursors: methyltrimethoxysilane, dimethoxydimethylsilane and tetramethoxysilane (TMOS). The hybrid films exhibited excellent gap-filling capabilities (0.45 micron trenches). Thermal desorption experiments indicate that heating to approximately 130 C removes moisture and volatile organic constituents present in the as-cast film. Curing was found to increase the adhesion between the xerogel and the silicon substrate. Moisture was found to be responsible for an increase in the dielectric constant. That is, in ambient, the dielectric constant for a cured film was found to be 4.4; but in a dry atmosphere, it decreased to 2.5. Current-voltage measurements show the cured hybrid film possesses a breakdown field of 3.4 MV/cm.

Original languageEnglish
Pages (from-to)105-110
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume476
DOIs
StatePublished - 1 Dec 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1 Apr 19974 Apr 1997

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