Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devices

Yi-Ming Li*, Shao Ming Yu, Hung Ming Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

In this paper, we investigate the threshold voltage fluctuation for nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) and silicon-on-insulator (SOI) devices. The threshold voltage fluctuation comes from random dopant and short channel effects. The random-dopant-induced fluctuation is due to the random nature of ion implantation. The gate-length deviation and the line-edge roughness are mainly resulted from the short-channel effect. For the SOI devices, we should also consider the body thickness variation. In our investigation, the metal gate with high-κ material MOSFET is a good choice to reduce fluctuation of threshold voltage when comparing to the poly gate MOSFET and thin-body SOI devices.

Original languageEnglish
Pages (from-to)2117-2120
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
StatePublished - Sep 2007

Keywords

  • Gate-length deviation
  • Line-edge roughness
  • Modeling and simulation
  • Process-variation
  • Random dopant
  • Threshold voltage fluctuation

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