Process-related reliability issues toward sub-100 nm device regime

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Crucial process-related reliability issues, such as boron penetration, plasma charging damage, metal-gate processing, and emerging high-k dielectric, toward sub-100 nm technology nodes have been discussed.

Original languageEnglish
Title of host publication2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
PublisherIEEE Computer Society
Pages133-140
Number of pages8
ISBN (Print)0780372352, 9780780372351
DOIs
StatePublished - 1 Jan 2002
Event2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia
Duration: 12 May 200215 May 2002

Publication series

Name2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Volume1

Conference

Conference2002 23rd International Conference on Microelectronics, MIEL 2002
CountrySerbia
CityNis
Period12/05/0215/05/02

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