Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors

Ya-Hsiang Tai*, F. C. Su, M. S. Feng, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

Thin film transistors (TFTs) with various hydrogen concentrations in the amorphous silicon (a-Si:H) films and different silicon nitrides (SiNx) gate compositions have been stressed with dc bias to realize the process-related device reliability. For the positive gate bias stress, the instability phenomena mainly come from the electron trapping in the SiNx. On the other hand, for the negative gate bias stress, the hydrogen-enhanced state creation in the a-Si:H films due to the defect pool effect will be offset by the hole trapping in the SiNx. Consequently, the reliability of the TFTs was improved by using the SiNx gates with less trap sites and reducing the hydrogen concentration in the a-Si:H films.

Original languageEnglish
Pages730-732
Number of pages3
StatePublished - 1 Dec 1995
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 24 Oct 199528 Oct 1995

Conference

ConferenceProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period24/10/9528/10/95

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    Tai, Y-H., Su, F. C., Feng, M. S., & Cheng, H-C. (1995). Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors. 730-732. Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .