Process module control for low-κ dielectrics

Clive Hayzelden*, C. Ygartua, T. Casavant, M. Slessor, A. Srivatsa, M. Guevremont, P. Stevens, M. Young, T. Lu, R. Zhang, C. Treadwell, D. Soltz, J. Lauber, M. Krumbuegel, R. Fiordalice, S. Lange, P. Marella, S. Ashkenaz, K. Monahan, Tuyen K. TranLeu-Jih Perng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


A process control system is composed of a variety of elements, from measurement technologies and techniques, through sampling strategies and analysis algorithms, to data-driven action plans. All components are required to ensure a stable process, however, effective control is founded upon a set of easily measured, yield-relevant parameters. In this work, we describe the use of a toolset and methodology to provide such parameters, and explore sampling and analysis components for the evaluation, development, and control of low-κ dielectric processes. In comparison to historically-employed interline dielectric (ILD) materials such as SiO2, these low-κ materials and processes present significant integration, reliability, and stability concerns. A particularly sensitive parameter is the dielectric constant itself. Damage from high-power ultraviolet inspection techniques may also present challenges. As these relatively immature processes migrate into volume production, these same tools and parameters can be used to monitor the low-κ process module, improve baseline yield, and control excursions.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalIEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
Issue number1
StatePublished - 1 Dec 2000
Event9th International Symposium on Semiconductor Manufacturing - Tokyo, Japan
Duration: 26 Sep 200028 Sep 2000


  • Low-κ dielectrics
  • Optical and electrical metrology
  • Process module control
  • Yield enhancement

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