Process and doping species dependence of negative-bias-temperature instability for P-channel MOSFETs

Da Yuan Lee, Horng-Chih Lin, Wan Ju Chiang, Wen Tai La, G. Nuang, Tiao Yuan Huang, Ta-Hui Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

The effects of poly-Si gate doping type and species on the negative-bias-temperature instability (NBTI) of p-channel MOS transistors were investigated. We found that, by properly suppressing boron penetration through careful thermal budget, NBTI can be reduced by proper fluorine incorporation. In addition, we found that NBTI is larger for devices with PMA annealing, thus clearly identified the role of hydrogen passivation in NBTI.

Original languageEnglish
Title of host publication2002 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
EditorsCalvin T. Gabriel, Terence Hook, Koji Eriguchi
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages150-153
Number of pages4
ISBN (Electronic)0965157776
DOIs
StatePublished - 1 Jan 2002
Event7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 - Maui, United States
Duration: 5 Jun 20027 Jun 2002

Publication series

NameInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Volume2002-January

Conference

Conference7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
CountryUnited States
CityMaui
Period5/06/027/06/02

Keywords

  • Boron
  • Degradation
  • Doping
  • Hydrogen
  • MOSFETs
  • Niobium compounds
  • Plasma devices
  • Plasma measurements
  • Titanium compounds
  • Tunneling

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  • Cite this

    Lee, D. Y., Lin, H-C., Chiang, W. J., La, W. T., Nuang, G., Huang, T. Y., & Wang, T-H. (2002). Process and doping species dependence of negative-bias-temperature instability for P-channel MOSFETs. In C. T. Gabriel, T. Hook, & K. Eriguchi (Eds.), 2002 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 (pp. 150-153). [1042631] (International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPID.2002.1042631