Process and device characterization of a Gated-Field-Emission triodes for flat-panel display application

S. C. Lu, J. C.M. Huang, J. H. Tsai, D. Liu, C. Y. Lin, D. Wang, J. G. Peng, T. Z. Yang, C. S. Chiou, K. L. Chang, C. L. Lee, C. W. Lu

Research output: Contribution to conferencePaperpeer-review

Abstract

Gated-Field-Emission Triode from the cone-tip formation process to its emission properties has been systematically characterized. Process simulation shows that the successful formation of the micro tip structure is mainly determined by the migration length of the e-beam evaporated layer. The measured triode characteristics matches well with the simulated program in the saturation region with proper tip radius adjustment without an artificial enhancement factor. The calculated enhancement factor matches well with other published data.

Original languageEnglish
DOIs
StatePublished - 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 12 Jul 199415 Jul 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period12/07/9415/07/94

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