Probing the onset of strong localization and electronelectron interactions with the presence of a direct insulatorquantum Hall transition

Shun-Tsung Lo, Kuang Yao Chen, T. L. Lin, Li Hung Lin, Dong Sheng Luo, Y. Ochiai, N. Aoki, Yi Ting Wang, Zai Fong Peng, Yiping Lin, J. C. Chen, Sheng-Di Lin, C. F. Huang, C. T. Liang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulatorquantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electronelectron interaction effects for the observed transition in our study.

Original languageEnglish
Pages (from-to)1902-1905
Number of pages4
JournalSolid State Communications
Volume150
Issue number39-40
DOIs
StatePublished - 1 Oct 2010

Keywords

  • A. Semiconductor
  • B. Epitaxy
  • D. Electronelectron interactions
  • D. Quantum Hall effect

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