Probing Landau quantization with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system

Kuang Yao Chen, Y. H. Chang, C. T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, Li Hung Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, Jau Yang Wu, Sheng-Di Lin

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Abstract

Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magneto-resistivity oscillations due to Landau quantization can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localization.

Original languageEnglish
Article number295223
JournalJournal of Physics Condensed Matter
Volume20
Issue number29
DOIs
StatePublished - 23 Jul 2008

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    Chen, K. Y., Chang, Y. H., Liang, C. T., Aoki, N., Ochiai, Y., Huang, C. F., Lin, L. H., Cheng, K. A., Cheng, H. H., Lin, H. H., Wu, J. Y., & Lin, S-D. (2008). Probing Landau quantization with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system. Journal of Physics Condensed Matter, 20(29), [295223]. https://doi.org/10.1088/0953-8984/20/29/295223