Probing Inhomogeneous Lattice Deformation at Interface of S i(111)/S i O2 by Optical Second-Harmonic Reflection and Raman Spectroscopy

Jung Y. Huang*

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Optical second-harmonic generation (SHG) and Raman spectroscopy have been applied to investigate surface strain/stress appearing at the interface between Si(111) and thermally grown SiO2 layers. From the frequency shift and spectral broadening of the optical phonon mode of Si(111) covered by a 608-Å-thick oxide layer, a tensile stress of 19 kbar was obtained. The azimuthal distribution of the reflected second-harmonic (SH) signal varies with the thickness of surface oxide. To deduce the strain in the lattice-deformed layer, a simple microscopic theory based upon the bond additivity model was proposed, and an agreement between the results of SHG and Raman spectroscopy was achieved. This study suggests that SHG is a sensitive technique for examining surface stress/strain between two lattice-mismatched layers. Therefore it can be useful for the study of the structure of Si1- x Ge x and many other strained-layer systems.

Original languageEnglish
Number of pages1
JournalJapanese Journal of Applied Physics
Volume33
Issue number7R
DOIs
StatePublished - 1 Jan 1994

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