Probing a nonuniform two-dimensional electron gas with random telegraph signals

Ming-Jer Chen, Chien-Chih Lee, Ming-Pei Lu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We observe a sequence of two-level random telegraph signals (RTSs) in the drain/source current of a 1.7 nm gate oxide silicon metal-oxide-semiconductor field-effect transistor. The RTS magnitude is transformed into the apparent Debye length around a negatively charged oxide trap. We achieve excellent reproduction of the Debye data (40 down to 5 nm). This leads to the quantified area spanned by the dominant conductive percolation paths in the underlying two-dimensional electron gas (2DEG). We find that most of the 2DEG in inversion is recovered in a largest threshold voltage sample (similar to 0.35 V), while for the lowest threshold (similar to 0.15 V), a certain conductive filament is likely to occur. The gate direct tunneling current further corroborates the percolation picture. (c) 2008 American Institute of Physics.
Original languageEnglish
Article number034511
JournalJournal of Applied Physics
Volume103
Issue number3
DOIs
StatePublished - 1 Feb 2008

Keywords

  • FIELD-EFFECT TRANSISTORS; SUBMICROMETER MOSFETS; INVERSION-LAYERS; SINGLE-ELECTRON; COULOMB ENERGY; RTS NOISE; INTERFACE; AMPLITUDE; DEFECTS; TRAPS

Fingerprint Dive into the research topics of 'Probing a nonuniform two-dimensional electron gas with random telegraph signals'. Together they form a unique fingerprint.

Cite this