Preventing dielectric damage of low-k organic siloxane by passivation treatment

T. C. Chang*, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, Fu-Ming Pan, W. F. Wu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

An organic SOG, the Hybird-Organic-Siloxane-Polymer (HOSP), has high applicability to ULSI processes, because of the low dielectric constant of about 2.5. However, the HOSP film will be damaged after photoresist removal. The function groups of HOSP will be destroyed by O2 plasma ashing and chemical wet stripper, which leads to electrical degradation. In order to avoid the issue, H2 plasma treatment is proposed to prevent HOSP film from photoresisit stripping damage. It is found that leakage current is decreased significantly and the dielectric constant is still maintained at a low k value even after photoresist stripping. Therefore, H2 plasma treatment is an effective technique to enhance the resistance of HOSP film against photoresist stripping damage.

Original languageEnglish
Pages (from-to)469-475
Number of pages7
JournalMicroelectronic Engineering
Volume60
Issue number3-4
DOIs
StatePublished - 1 Jan 2002

Keywords

  • Electrical degradation
  • H plasma
  • HOSP
  • Photoresist removal
  • Stripping

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    Chang, T. C., Mor, Y. S., Liu, P-T., Tsai, T. M., Chen, C. W., Mei, Y. J., Pan, F-M., Wu, W. F., & Sze, S. M. (2002). Preventing dielectric damage of low-k organic siloxane by passivation treatment. Microelectronic Engineering, 60(3-4), 469-475. https://doi.org/10.1016/S0167-9317(02)00420-3