Pressure-induced metallization and resonant Raman scattering in Zn1-x Mnx Te

Y. C. Lin, W. C. Fan, C. H. Chiu, F. K. Ke, S. L. Yang, D. S. Chuu, M. C. Lee, Wei-Kuo Chen, Wen-Hao Chang, Wu-Ching Chou, J. S. Hsu, J. L. Shen

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Abstract

Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn1-x Mnx Te (0 ≦x≦0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt (x) =15.7-25.4x+19.0 x2 (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Grüneisen parameters were adopted to investigate the influence of Mn2+ ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn1-x Mnx Te.

Original languageEnglish
Article number013503
JournalJournal of Applied Physics
Volume104
Issue number1
DOIs
StatePublished - 28 Jul 2008

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