Pressure-dependent Raman scattering and photoluminescence of Zn 1-xCdxSe epilayers

Y. C. Lin, C. H. Chiu, W. C. Fan, S. L. Yang, D. S. Chuu, Wu-Ching Chou*

*Corresponding author for this work

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Raman and photoluminescence spectra of cubic Zn1-xCd xSe (0 ≦x ≦ 0.32) epilayers were obtained at high pressure. The impurity mode I observed in the phonon Raman spectra at low temperature confirms the intermediate phonon mode behavior. A split transverse optical phonon mode was found in the down-stroke high-pressure Raman scattering. Additionally, the pressure-dependent longitudinal optical (LO) phonon frequencies and the Grüneisen parameter (γLO) were obtained by quadratic polynomial fitting. Pressure-driven resonant Raman scattering effect was observed in samples with a high Cd concentration (x≧ 0.18). The critical pressure of semiconductor-to-metal phase transition (Pt) decreases as the Cd content increases. As the Cd concentration increases from 0 to 0.32, Pt falls from 13.6 to 9.4 GPa, according to Pt (GPa)= 13.6-6.8x-20.3x2.

Original languageEnglish
Article number073507
JournalJournal of Applied Physics
Issue number7
StatePublished - 24 Apr 2007

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