Pressure-dependent Raman scattering and photoluminescence of Zn 1-xCdxSe epilayers

Y. C. Lin; C. H. Chiu; W. C. Fan; S. L. Yang; D. S. Chuu; Wu-Ching Chou

doi:10.1063/1.2719287

Pressure-dependent Raman scattering and photoluminescence of Zn _1-xCd_xSe epilayers

Y. C. Lin, C. H. Chiu, W. C. Fan, S. L. Yang, D. S. Chuu, Wu-Ching Chou^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Raman and photoluminescence spectra of cubic Zn_1-xCd _xSe (0 ≦x ≦ 0.32) epilayers were obtained at high pressure. The impurity mode I observed in the phonon Raman spectra at low temperature confirms the intermediate phonon mode behavior. A split transverse optical phonon mode was found in the down-stroke high-pressure Raman scattering. Additionally, the pressure-dependent longitudinal optical (LO) phonon frequencies and the Grüneisen parameter (γ_LO) were obtained by quadratic polynomial fitting. Pressure-driven resonant Raman scattering effect was observed in samples with a high Cd concentration (x≧ 0.18). The critical pressure of semiconductor-to-metal phase transition (Pt) decreases as the Cd content increases. As the Cd concentration increases from 0 to 0.32, Pt falls from 13.6 to 9.4 GPa, according to Pt (GPa)= 13.6-6.8x-20.3x².

Original language	English
Article number	073507
Journal	Journal of Applied Physics
Volume	101
Issue number	7
DOIs	https://doi.org/10.1063/1.2719287
State	Published - 24 Apr 2007

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title = "Pressure-dependent Raman scattering and photoluminescence of Zn 1-xCdxSe epilayers",

abstract = "Raman and photoluminescence spectra of cubic Zn1-xCd xSe (0 ≦x ≦ 0.32) epilayers were obtained at high pressure. The impurity mode I observed in the phonon Raman spectra at low temperature confirms the intermediate phonon mode behavior. A split transverse optical phonon mode was found in the down-stroke high-pressure Raman scattering. Additionally, the pressure-dependent longitudinal optical (LO) phonon frequencies and the Gr{\"u}neisen parameter (γLO) were obtained by quadratic polynomial fitting. Pressure-driven resonant Raman scattering effect was observed in samples with a high Cd concentration (x≧ 0.18). The critical pressure of semiconductor-to-metal phase transition (Pt) decreases as the Cd content increases. As the Cd concentration increases from 0 to 0.32, Pt falls from 13.6 to 9.4 GPa, according to Pt (GPa)= 13.6-6.8x-20.3x2.",

author = "Lin, {Y. C.} and Chiu, {C. H.} and Fan, {W. C.} and Yang, {S. L.} and Chuu, {D. S.} and Wu-Ching Chou",

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T1 - Pressure-dependent Raman scattering and photoluminescence of Zn 1-xCdxSe epilayers

AU - Lin, Y. C.

AU - Chiu, C. H.

AU - Fan, W. C.

AU - Yang, S. L.

AU - Chuu, D. S.

AU - Chou, Wu-Ching

PY - 2007/4/24

Y1 - 2007/4/24

N2 - Raman and photoluminescence spectra of cubic Zn1-xCd xSe (0 ≦x ≦ 0.32) epilayers were obtained at high pressure. The impurity mode I observed in the phonon Raman spectra at low temperature confirms the intermediate phonon mode behavior. A split transverse optical phonon mode was found in the down-stroke high-pressure Raman scattering. Additionally, the pressure-dependent longitudinal optical (LO) phonon frequencies and the Grüneisen parameter (γLO) were obtained by quadratic polynomial fitting. Pressure-driven resonant Raman scattering effect was observed in samples with a high Cd concentration (x≧ 0.18). The critical pressure of semiconductor-to-metal phase transition (Pt) decreases as the Cd content increases. As the Cd concentration increases from 0 to 0.32, Pt falls from 13.6 to 9.4 GPa, according to Pt (GPa)= 13.6-6.8x-20.3x2.

AB - Raman and photoluminescence spectra of cubic Zn1-xCd xSe (0 ≦x ≦ 0.32) epilayers were obtained at high pressure. The impurity mode I observed in the phonon Raman spectra at low temperature confirms the intermediate phonon mode behavior. A split transverse optical phonon mode was found in the down-stroke high-pressure Raman scattering. Additionally, the pressure-dependent longitudinal optical (LO) phonon frequencies and the Grüneisen parameter (γLO) were obtained by quadratic polynomial fitting. Pressure-driven resonant Raman scattering effect was observed in samples with a high Cd concentration (x≧ 0.18). The critical pressure of semiconductor-to-metal phase transition (Pt) decreases as the Cd content increases. As the Cd concentration increases from 0 to 0.32, Pt falls from 13.6 to 9.4 GPa, according to Pt (GPa)= 13.6-6.8x-20.3x2.

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