Present status and future direction of BSIM SOI model for high-performance/low-power/RF application

Samuel K.H. Fung*, Pin Su, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and FD). The key concept of dynamic depletion will be discussed.

Original languageEnglish
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages690-693
Number of pages4
StatePublished - 1 Dec 2002
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
Duration: 21 Apr 200225 Apr 2002

Publication series

Name2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Conference

Conference2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CountryPuerto Rico
CitySan Juan
Period21/04/0225/04/02

Keywords

  • Compact model
  • Fully depleted
  • History effect
  • Partially depleted
  • SOI

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    Fung, S. K. H., Su, P., & Hu, C-M. (2002). Present status and future direction of BSIM SOI model for high-performance/low-power/RF application. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 (pp. 690-693). (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).