Present and future of GaN power devices and their applications

Daisuke Ueda*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reviews the status quo of several GaN-based power devices. By using unique polarized heterostructure of GaN/AlGaN materials, NSJ (Natural Super Junction) diode was proposed to break through the trade-off between the blocking voltage and the on-resistance. Normally-off GaN-based device was realized by GIT (Gate Injection Transistor) structure, where p-type AlGaN hole-injector are provided as a gate reducing the on-resistance by conductivity modulation. Experimentally fabricated inverter system using GaN GIT achieved the world-highest conversion efficiency over 99.3%. Further, by combining the microwave performance and power handling capability of of GaN-based devices, we developed Drive-by-Microwave (DbM) technology as a DC-isolated gate driver for GaN power switch. This is a fusion of microwave and power devices for the first time using GaN-based materials.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices X
EditorsJen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
PublisherSPIE
ISBN (Electronic)9781628414530
DOIs
StatePublished - 1 Jan 2015
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: 9 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9363
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices X
CountryUnited States
CitySan Francisco
Period9/02/1512/02/15

Keywords

  • Bidirectional switch
  • Drive-by Microwave
  • GaN
  • Gate Injection Transistor
  • GIT
  • Natural super junction
  • NSJ

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  • Cite this

    Ueda, D. (2015). Present and future of GaN power devices and their applications. In J-I. Chyi, H. Morkoc, & H. Fujioka (Eds.), Gallium Nitride Materials and Devices X [936310] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9363). SPIE. https://doi.org/10.1117/12.2076351