Preparation of nano-scale patterns on the silicon oxide surface by dip-pen nanolithography

Jeng-Tzong Sheu*, C. H. Wu, H. H. Liu, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dip-pen nanolithography (DPN), which uses an "inked" AFM tip to deposit organic molecules through a water meniscus onto an underlying substrate under ambient conditions, has been used to create N-(2-aminoethyl)-3-amino- propyl-trimethoxysilane (AEAPTMS) nano patterns as linkers for anchoring gold nanoparticles on the surface of SiO2. In this study, conditions of DPN for organic patterns, AEAPTMS, with sub-100 nm dimensions are investigated. Moreover, gold nanoparticles with citrate-negativey-charged surface were deposited selectively on top of DPN orgainc patterns. Lateral force microscope (LFM) was utilized to differentiate different surface between oxidized semi-conductor surfaces and patterned areas with monolayer of AEAPTMS. Line-width as small as 60 nm has been successfully achieved by this method.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages895-898
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Conference

Conference2005 5th IEEE Conference on Nanotechnology
CountryJapan
CityNagoya
Period11/07/0515/07/05

Keywords

  • AFM tip
  • Dip-pen nanolithography (DPN)
  • Lateral force microscopy (LFM)
  • N-(2-aminoethyl)-3-amino propyl-tri-meth-oxysilane (AEAPT-MS)

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    Sheu, J-T., Wu, C. H., Liu, H. H., & Chao, T-S. (2005). Preparation of nano-scale patterns on the silicon oxide surface by dip-pen nanolithography. In 2005 5th IEEE Conference on Nanotechnology (pp. 895-898). [1500862] (2005 5th IEEE Conference on Nanotechnology; Vol. 2). https://doi.org/10.1109/NANO.2005.1500862