Nano-scale In 2O 3, Ga 2O 3 and ZnO powder mixture prepared by a hybrid process of chemical dispersion and mechanical grinding was adopted for the In-Ga-Zn-O (IGZO) sputtering target fabrication. A pressure-less sintering at 1300°C for 6 h yielded the target containing sole InGaZnO 4 phase with relative density as high as 93%. Consequently, the thin-film transistor (TFT) devices containing amorphous IGZO channels were prepared by using the self-prepared target and the electrical measurements indicated the TFT subjected to a post annealing at 300°C exhibits the best device performance with the saturation mobility = 14.7 cm 2/V s, threshold voltage = 0.57 V, subthreshold gate swing = 0.45 V/decade and on/off ratio = 10 8. Capacitance-voltage measurement indicated that post annealing effectively suppresses the interfacial traps density at the IGZO/SiO 2 interface and thus enhances the electrical performance of TFT.
- Interfacial traps density
- Thin-film transistor