Preparation of a novel target material for carbon nitride film deposition

Tien Rong Lu, Cheng Tzu Kuo*, Teng-Ming Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


To increase the nitrogen content and the degree of crystallinity in carbon nitride films by film deposition techniques (i.e. sputtering, laser ablation etc.), a novel target material composed of carbon nitride has been prepared by UV photo-assisted synthesis. The intention is to replace the traditional graphite target with this material. This synthesis involves photo-chemical reaction of sodium amide and chloroform as carbon and nitrogen sources, respectively, followed by high temperature sintering under flowing nitrogen. Elemental analyses indicate the presence of C, N and H in the target material with a nitrogen to carbon ratio of 0.23. Infrared spectroscopy shows a mixture of sp3 and sp2 carbon and sp2 nitrogen in the sintered powder. Six diffraction peaks attributable to α-C3N4 were observed in XRD pattern. Grains of ∼0.3 μm in diameter in an extended network were also observed in the SEM micrographs. The sintered carbon nitride powder is stable up to 800°C.

Original languageEnglish
Pages (from-to)126-129
Number of pages4
JournalThin Solid Films
Issue number1-4
StatePublished - 31 Oct 1997


  • Carbon nitride
  • UV photo-assisted synthesis

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